首页> 外文OA文献 >Noise performance and ionizing radiation tolerance of CMOS Monolithic Active Pixel Sensors using the 0.18μm CMOS process

【2h】

Noise performance and ionizing radiation tolerance of CMOS Monolithic Active Pixel Sensors using the 0.18μm CMOS process

机译：采用0.18μmCMOS工艺的CMOS单片有源像素传感器的噪声性能和电离辐射容限

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Doering, D.; Baudot, J.; Deveaux, M.; Linnik, B.; Goffe, M.; Senyukov, S.; Strohauer, S.; Stroth, J.; Winter, M.;
展开▼
作者单位

展开▼
年度 2014
总页数
原文格式 PDF
正文语种 eng
中图分类

相似文献

外文文献
中文文献
专利

1. Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process [J] . Ying Zhang, Hongbo Zhu, Liang Zhang, Nuclear Instruments & Methods in Physics Research . 2016,第sepa21期

机译：使用0.18μmCMOS工艺的CMOS像素传感器的电荷收集和非电离辐射容限
2. A process modification for CMOS monolithic active pixel sensors for enhanced depletion, timing performance and radiation tolerance [J] . W. Snoeys, G. Aglieri Rinella, H. Hillemanns, Nuclear Instruments & Methods in Physics Research . 2017,第nova1期

机译：CMOS单块有源像素传感器的工艺改进，以增强耗尽，定时性能和辐射耐受性
3. Pitch dependence of the tolerance of CMOS monolithic active pixel sensors to non-ionizing radiation [J] . D. Doering, M. Deveaux, M. Domachowski, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2013,第deca1期

机译：CMOS单块有源像素传感器对非电离辐射的公差的间距依赖性
4. Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors [C] . Enrico Junior Schioppa, Richard Bates, Craig Buttar, European Conference on Radiation and Its Effects on Components and Systems . 2017

机译：用于耗尽型单片有源像素传感器的新型CMOS工艺的辐射硬度研究
5. On-chip spatial image processing with CMOS active pixel sensors. [D] . Hong, Canaan Sungkuk. 2001

机译：使用CMOS有源像素传感器的片上空间图像处理。
6. Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100 Fill Factor and Full CMOS Pixels [O] . Jamie Alexander Ballin, Jamie Phillip Crooks, Paul Dominic Dauncey, 2008

机译：采用四阱技术的单片有源像素传感器（MAPS）可实现接近100％的填充因子和完整的CMOS像素
7. Non-ionizing radiation hardness of CMOS Monolithic Active Pixel Sensors manufactured in a 0.18$mu$m CMOS process [O] . Doering D., Deveaux M., Linnik B., 2015

机译：采用0.18美元/微米CMOS工艺制造的CMOS单片有源像素传感器的非电离辐射硬度

Noise performance and ionizing radiation tolerance of CMOS Monolithic Active Pixel Sensors using the 0.18μm CMOS process

著录项

引文网络

相似文献

相关主题

期刊订阅